Description
Specifications
| Manufacturer | Toshiba |
| Product Category | Bipolar Transistors – BJT |
| Mounting Style | Through Hole |
| Package/Case | 2-21F1A-3 |
| Transistor Polarity | NPN |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 230 V |
| Collector- Base Voltage VCBO | 230 V |
| Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 3 V |
| Maximum DC Collector Current | 15 A |
| Pd – Power Dissipation | 150 W |
| Gain Bandwidth Product fT | 30 MHz |
| Minimum Operating Temperature | – |
| Maximum Operating Temperature | + 150 C |
| Series | TTC5200 |
| Packaging | Tray |
| Brand | Toshiba |
| Continuous Collector Current | 15 A |
| DC Collector/Base Gain hFE Min | 80 |
| DC Current Gain hFE Max | 160 |
| Product Type | BJTs – Bipolar Transistors |
| Subcategory | Transistors |
| Technology | Si |
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