Description
The Toshiba 2SA1943 is a high-power, high-performance PNP transistor commonly used in audio amplifier circuits. Below are its detailed specifications:
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- Type: PNP Bipolar Junction Transistor (BJT)
- Maximum Collector-Emitter Voltage (Vce): -230V
- Maximum Collector Current (Ic): -15A
- Power Dissipation (Pc): 150W
- DC Current Gain (hFE): Typically 55-160 (depends on operating conditions)
- Base-Emitter Voltage (Vbe): -1.5V (maximum)
- Transition Frequency (fT): 30 MHz
- Package Type: TO-3P
- Operating Temperature Range: -55°C to 150°C
Features:
- High power dissipation (150W)
- Excellent linearity, making it suitable for audio amplification
- High collector current capability (-15A), suitable for demanding applications
- Complementary to the 2SC5200 (NPN transistor), often used together in push-pull amplifier designs
Applications:
- High-power audio amplifiers
- Motor control circuits
- General-purpose high-power switching
- Signal processing in industrial systems
Notes:
- Ensure proper heat sinking due to high power dissipation.
- Toshiba’s 2SA1943 is a popular choice for high-quality audio amplifier designs due to its low distortion and reliability.
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