TTC5200 Toshiba Original Audio Power Transistor
Original price was: ₹199.00.₹140.00Current price is: ₹140.00. Save ₹59.00 (30%)
TTC5200 NPN Transistor designed for general purpose power amplifier and switching applications. High collector voltage: VCEO = 230 V
Specifications
| Manufacturer | Toshiba |
| Product Category | Bipolar Transistors – BJT |
| Mounting Style | Through Hole |
| Package/Case | 2-21F1A-3 |
| Transistor Polarity | NPN |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 230 V |
| Collector- Base Voltage VCBO | 230 V |
| Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 3 V |
| Maximum DC Collector Current | 15 A |
| Pd – Power Dissipation | 150 W |
| Gain Bandwidth Product fT | 30 MHz |
| Minimum Operating Temperature | – |
| Maximum Operating Temperature | + 150 C |
| Series | TTC5200 |
| Packaging | Tray |
| Brand | Toshiba |
| Continuous Collector Current | 15 A |
| DC Collector/Base Gain hFE Min | 80 |
| DC Current Gain hFE Max | 160 |
| Product Type | BJTs – Bipolar Transistors |
| Subcategory | Transistors |
| Technology | Si |
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Add to cartDetailed Specifications:-
Transistor Polarity NPN Collector-Base Voltage (VCBO) 230V Collector-Emitter Voltage (VCEO) 230V Emitter-Base Voltage (VEBO) 5V Continuous Collector Current (IC) 15A Base Current (IB) 1.5A Transition Frequency (fT) 30MHz DC Current Gain (hFE) 55-160 Operating Temperature Range -55 – 150°C Power Dissipation (PD) 150W -
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- Month & Year of Manufacture: May 2025
- Country of Origin: Made in India
Manufacturer & Packer Details
Manufactured For & Packed By:
IVA ERED’SES
B-45, G.T. Karnal Road Industrial Area,
Delhi – 110033, India✅ Use Cases
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10 Years WarrantyProduct Enquiry
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1 review for TTC5200 Toshiba Original Audio Power Transistor